Binding energy of two-dimensional biexcitons

Binding energy of two-dimensional biexcitons.

Binding of quasi-two-dimensional biexcitons.

Binding Energy of Localized Biexcitons in Quantum Wells

A variational calculation of the ground state energy of a biexciton in a GaAs/AlGaAs quantum well is presented. The well width fluctuations leading to trapping of the biexcitons are modeled by a parabolic potential. The results obtained for different well widths are compared with recent experimental data. Good agreement is obtained both for the biexciton binding energy and for the Haynes factor...

Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

Excitonic effects play a particularly important role in the optoelectronic behavior of twodimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide ...

Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells